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June 5, 2025
WIN Semiconductors Announces Linearity Optimized 0.12 µm GaN Power Process
WIN Semiconductors Announces Linearity Optimized 0.12 µm GaN Power Process
WIN Semiconductors Corp announces the launch of its NP12-1B, a 0.12 μm gate-length depletion-mode GaN HEMT technology on SiC substrates.
WIN Semiconductors Corp announces the launch of its NP12-1B, a 0.12 μm gate-length depletion-mode GaN HEMT technology on SiC substrates.
http://www.microwavejournal.com/rss/topic/3369-industry-news
RF & Microwave Industry News
https://www.microwavejournal.com/articles/44218-win-semiconductors-announces-linearity-optimized-012-m-gan-power-process
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