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November 18, 2023
RTX and DARPA to Revolutionize GaN Technology for Improved RF Sensors
RTX and DARPA to Revolutionize GaN Technology for Improved RF Sensors
Raytheon has been awarded a four-year, $15 million contract from DARPA to increase the electronic capability of RF sensors with high-power-density GaN transistors.
Raytheon has been awarded a four-year, $15 million contract from DARPA to increase the electronic capability of RF sensors with high-power-density GaN transistors.
http://www.microwavejournal.com/rss/topic/3369-industry-newsIndustry Newshttps://www.microwavejournal.com/articles/41146-rtx-and-darpa-to-revolutionize-gan-technology-for-improved-rf-sensors
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