Mitsubishi Electric to Expand Product Range of Ku-Band GaN HEMTs
Mitsubishi Electric to Expand Product Range of Ku-Band GaN HEMTs
Mitsubishi Electric Corporation announced that two new Ku-Band (13.75 to 14.5 GHz) 30 W (45.3 dBm) GaN high-electron-mobility transistors (HEMTs) will be added to the company’s GaN HEMT lineup for satellite-communication (SATCOM) earth stations.
Mitsubishi Electric Corporation announced that two new Ku-Band (13.75 to 14.5 GHz) 30 W (45.3 dBm) GaN high-electron-mobility transistors (HEMTs) will be added to the company’s GaN HEMT lineup for satellite-communication (SATCOM) earth stations.
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