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December 5, 2018
imec First to Stack FinFETS with 45 nm Fin Pitch Using Sequential 3D Integration
imec First to Stack FinFETS with 45 nm Fin Pitch Using Sequential 3D Integration
At the IEEE IEDM 2018 conference, imec presents a first demonstration of 3D stacked FinFETs on 300 mm wafers using a sequential integration approach with a 45 nm fin pitch and 110 nm poly pitch technology.
At the IEEE IEDM 2018 conference, imec presents a first demonstration of 3D stacked FinFETs on 300 mm wafers using a sequential integration approach with a 45 nm fin pitch and 110 nm poly pitch technology.
http://www.microwavejournal.com/rss/topic/3369-industry-newsIndustry Newshttp://www.microwavejournal.com/articles/31441-imec-first-to-stack-finfets-with-45-nm-fin-pitch-using-sequential-3d-integration
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