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DAS Micro CellGeorgia Tech Develops Room-Temp Process to Bond GaN to Diamond
Georgia Tech Develops Room-Temp Process to Bond GaN to Diamond
A room-temperature bonding technique for integrating wide bandgap materials such as GaN with thermally conducting materials such as diamond is intended to improve GaN device cooling to achieve higher output power, improved reliability and reduced manufacturing costs.
A room-temperature bonding technique for integrating wide bandgap materials such as GaN with thermally conducting materials such as diamond is intended to improve GaN device cooling to achieve higher output power, improved reliability and reduced manufacturing costs.
http://www.microwavejournal.com/rss/topic/3369-industry-newsIndustry Newshttps://www.microwavejournal.com/articles/33689-georgia-tech-meisei-university-and-waseda-university-develop-room-temperature-process-to-bond-gan-to-diamond
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