How Sputtering Could Drive the Adoption of High Performance ScAlN-Based Transistors
How Sputtering Could Drive the Adoption of High Performance ScAlN-Based TransistorsTokyo University of Science researchers unveil the critical role of growth temperature in sputter epitaxy of scandium aluminum nitride (ScAlN) films on GaN heterostructures.Tokyo University of Science researchers unveil the critical role of growth temperature in sputter epitaxy of scandium aluminum nitride (ScAlN) films on […]
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