OSP Services
ISP Services
Project Management
Telecom Wireless
DAS Micro Cell
August 9, 2025
How Sputtering Could Drive the Adoption of High Performance ScAlN-Based Transistors
How Sputtering Could Drive the Adoption of High Performance ScAlN-Based Transistors
Tokyo University of Science researchers unveil the critical role of growth temperature in sputter epitaxy of scandium aluminum nitride (ScAlN) films on GaN heterostructures.
Tokyo University of Science researchers unveil the critical role of growth temperature in sputter epitaxy of scandium aluminum nitride (ScAlN) films on GaN heterostructures.
http://www.microwavejournal.com/rss/topic/3369-industry-news
RF & Microwave Industry News
https://www.microwavejournal.com/articles/44586-how-sputtering-could-drive-the-adoption-of-high-performance-scaln-based-transistors
Powered by WPeMatico
