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June 25, 2022
WIN Semiconductors Releases 0.12 µm RF GaN on SiC Technology
WIN Semiconductors Releases 0.12 µm RF GaN on SiC Technology
WIN Semiconductors Corp has expanded its portfolio of RF GaN technologies with the release of a new GaN on SiC 0.12 μm-gate technology.
WIN Semiconductors Corp has expanded its portfolio of RF GaN technologies with the release of a new GaN on SiC 0.12 μm-gate technology.
http://www.microwavejournal.com/rss/topic/3369-industry-newsIndustry Newshttps://www.microwavejournal.com/articles/38447-win-semiconductors-releases-012-m-rf-gan-on-sic-technology
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