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DAS Micro CellFinwave Semiconductor Addresses the 5G Challenge with Breakthrough 3DGaN™ FinFET Technology
Finwave Semiconductor Addresses the 5G Challenge with Breakthrough 3DGaN™ FinFET Technology
Founded in 2012 by MIT researchers as Cambridge Electronics, 2022 sees the company reborn with a new moniker, Finwave Semiconductor, Inc., and a focused mission: to revolutionize the future of 5G communications with next-generation 3D GaN technology.
Founded in 2012 by MIT researchers as Cambridge Electronics, 2022 sees the company reborn with a new moniker, Finwave Semiconductor, Inc., and a focused mission: to revolutionize the future of 5G communications with next-generation 3D GaN technology.
http://www.microwavejournal.com/rss/topic/3369-industry-newsIndustry Newshttps://www.microwavejournal.com/articles/38363-finwave-semiconductor-addresses-the-5g-challenge-with-breakthrough-3dgan-finfet-technology
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