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January 13, 2022
Scientists Develop High Performance Transistor Models and Circuits for Space and Defense
Scientists Develop High Performance Transistor Models and Circuits for Space and Defense
Indian researchers have developed a high performance industry-standard model for AlGaN/GaN HEMTs with simple design procedures which can be used to make high-power RF circuits owing to its high breakdown voltage.
Indian researchers have developed a high performance industry-standard model for AlGaN/GaN HEMTs with simple design procedures which can be used to make high-power RF circuits owing to its high breakdown voltage.
http://www.microwavejournal.com/rss/topic/3369-industry-newsIndustry Newshttps://www.microwavejournal.com/articles/37439-scientists-develop-high-performance-transistor-models-and-circuits-for-space-and-defense
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