UMS’ 0.25 μm GaN and 0.15 μm GaAs PHEMT processes now support the electro-thermal simulation capability in Keysight’s Pathwave ADS, enabling designers to simplify the MMIC design process while increasing confidence in their designs.

UMS’ 0.25 μm GaN and 0.15 μm GaAs PHEMT processes now support the electro-thermal simulation capability in Keysight’s Pathwave ADS, enabling designers to simplify the MMIC design process while increasing confidence in their designs.