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October 10, 2019
WIN Semiconductors Offering Sample Kit for 0.15 μm GaN on SiC Process
WIN Semiconductors Offering Sample Kit for 0.15 μm GaN on SiC Process
WIN Semiconductors is offering a sample kit for its 0.15 μm GaN on SiC process. Supporting full MMICs with through-wafer vias, the platform can be used to design linear or saturated power amplifiers operating to 35 GHz.
WIN Semiconductors is offering a sample kit for its 0.15 μm GaN on SiC process. Supporting full MMICs with through-wafer vias, the platform can be used to design linear or saturated power amplifiers operating to 35 GHz.
http://www.microwavejournal.com/rss/topic/3369-industry-newsIndustry Newshttps://www.microwavejournal.com/articles/32939-win-semiconductors-offering-sample-kit-for-015-m-gan-on-sic-process
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